savantic semiconductor product specification silicon npn power transistors 2SD1940 d escription with to-220f package wide area of safe operation applications 85v/6a, af 25 to 30w output applications pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings (ta=25 ) symbol parameter conditions max unit v cbo collector-base voltage open emitter 100 v v ceo collector-emitter voltage open base 85 v v ebo emitter-base voltage open collector 6 v i c collector current 6 a i cm collector current-peak 10 a p c collector dissipation t c =25 25 w t j junction temperature 150 t stg storage temperature -55~150 fig.1 simplified outline (to-220f) and symbol
savantic semiconductor product specification 2 silicon npn power transistors 2SD1940 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =5ma ;r be = 8 85 v v (br)cbo collector-base breakdown voltage i c =5ma ;i e =0 100 v v (br)ebo emitter-base breakdown voltage i e =5ma ;i c =0 6 v v cesat collector-emitter saturation voltage i c =4a ;i b =0.4a 2.0 v v be base-emitter on voltage i c =1a;v ce =5v 1.5 v i cbo collector cut-off current v cb =40v; i e =0 0.1 ma i ebo emitter cut-off current v eb =4v; i c =0 0.1 ma h fe-1 dc current gain i c =1a ; v ce =5v 60 320 h fe-2 dc current gain i c =3a ; v ce =5v 20 f t transition frequency i c =1a ; v ce =5v 15 mhz c ob collector output capacitance f=1mhz;v cb =10v 110 pf switching times t on turn-on time 0.28 s t s storage time 3.60 s t f fall time i c =0.5a; i b1 =-i b2 =50ma v cc =20v ,r l =40 b 0.50 s h fe-1 classifications d e f 60-120 100-200 160-320
savantic semiconductor product specification 3 silicon npn power transistors 2SD1940 package outline fig.2 outline dimensions
savantic semiconductor product specification 4 silicon npn power transistors 2SD1940
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